• Frontiers of Optoelectronics
  • Vol. 6, Issue 1, 97 (2013)
Xia GUO*, Xinxin LUAN, Wenjuan WANG, Chunwei GUO, and Guangdi SHEN
Author Affiliations
  • Photonic Device Research Laboratory (PDRL), Beijing University of Technology, Beijing 100124, China
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    DOI: 10.1007/s12200-012-0300-z Cite this Article
    Xia GUO, Xinxin LUAN, Wenjuan WANG, Chunwei GUO, Guangdi SHEN. Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure[J]. Frontiers of Optoelectronics, 2013, 6(1): 97 Copy Citation Text show less
    References

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    [2] Kim J K, Nakagawa S, Hall E, Coldren L A. Near-room-temperature continuous-wave operation of multiple-active region 1.55 mm vertical-cavity lasers with high differential efficiency. Applied Physics Letters, 2000, 77(20): 3137-3139

    [3] Kim J K, Hall E, Sjolund O, Coldren L A. Epitaxially-stacked multiple-active-region 1.55 μm lasers for increased differential efficiency. Applied Physics Letters, 1999, 74(22): 3251-3253

    [4] Knodl T, Golling M, Straub A, Ebeling K J. Multi-diode cascade VCSEL with 130% differential quantum efficiency at CW room temperature operation. Electronics Letters, 2001, 37(1): 31

    [5] Guo X, Shen G D, Ji Y, Wang X Z, Du J Y, Zou D S, Wang G H, Gao G, Balk L J, Heiderhoff R, Lee T H, Wang K L. Thermal property of tunnel-regenerated multiactive-region light-emitting diodes. Applied Physics Letters, 2003, 82(25): 4417-4419

    [6] Guo X, Shen G D, Guan B L, Gu X L, Wu D, Li Y B. Cascade single-chip phosphor-free white light-emitting diodes. Applied Physics Letters, 2008, 92(1): 013507

    [7] Liao L S, Klubek K P,Helber M J,Cosimbescu L, Comfort D L. High-efficiency tandem blue OLEDs. SID Symposium Digest of Technical Papers, 2006, 37(1): 1197-1200

    [8] Prineas J P, Olesberg J T, Yager J R, Cao C, Coretsopoulos C, Reddy M H M. Cascaded active regions in 2.4 μm GaInAsSb lightemitting diodes for improved current efficiency. Applied Physics Letters, 2006, 89(21): 211108

    [9] Guo X, Shen G D, Wang G H, Wang X Z, Du J Y, Gao G, Wang K L. Novel high-brightness tunneling-regenerated multi-active-region AlGaInP light-emitting diode. Science in China E: Technological Sciences, 2003, 46(2): 204-208

    [10] Kivisaari P, Riuttanen L, Oksanen J, Suihkonen S, Ali M, Lipsanen H, Tulkki J, Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes. Applied Physics Letters, 2012, 101(2): 021113

    [11] Guo X, Shen G D. The scalability of the tunnel-regenerated multiactive-region light-emitting diode structure. Chinese Physics B, 2008, 17(1): 307-310

    Xia GUO, Xinxin LUAN, Wenjuan WANG, Chunwei GUO, Guangdi SHEN. Scalabilities of LEDs and VCSELs with tunnel-regenerated multi-active region structure[J]. Frontiers of Optoelectronics, 2013, 6(1): 97
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