• Infrared and Laser Engineering
  • Vol. 34, Issue 1, 27 (2005)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of phase-transition VO2 thin films and properties[J]. Infrared and Laser Engineering, 2005, 34(1): 27 Copy Citation Text show less

    Abstract

    A kind of novel phase-transition VO2 thin films has been fabricated by reactive ion-sputting and post annealing. Various measurements such as electrical test,X-ray diffraction (XRD)and optical transmittance were carried out on the vanadium dioxide thin films.The phase transition temperature of the phase-transition thin films is more nearly close to room temperature. The SEM grmicrograph shows that the thin films are smooth and compact.A conclusion is drawn that the thin films contain V2O5 except for VO2 through its XRD,which indicates that VO2 and V2O5 both exist in the thin films.And the optical transmittance test indicates that the transmittance of the VO2 thin films at lower temperature is as five times as that at higher temperature.Experimental results show that partial oxygen pressure,annealing temperature and annealing time are the key factors of fabrication of the new phase-transition vanadium dioxide thin films.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Fabrication of phase-transition VO2 thin films and properties[J]. Infrared and Laser Engineering, 2005, 34(1): 27
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