• Chinese Journal of Lasers
  • Vol. 31, Issue s1, 483 (2004)
LIU Chong1、*, GE Jian-hong1, CHEN Jun1, Andreas Hermerschmidt2, and H. J. Eichler2
Author Affiliations
  • 1[in Chinese]
  • 2Optisches Institut, Technische Universitaet , D10623, Germany
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    LIU Chong, GE Jian-hong, CHEN Jun, Andreas Hermerschmidt, H. J. Eichler. Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam[J]. Chinese Journal of Lasers, 2004, 31(s1): 483 Copy Citation Text show less

    Abstract

    A novelty external-cavity is designed to improve beam quality aim at broad area laser diode (BALD). The external-cavity is composed with р?але mirror and blazed diffraction grating. With this kind of setup, a laser beam is obtained with 0.53° far field divergence angle, which corresponding to 1.3 times the diffraction limit, 320 mW output power, spectral line width of 0.02 nm when drive current is 2.7 times threshold current.
    LIU Chong, GE Jian-hong, CHEN Jun, Andreas Hermerschmidt, H. J. Eichler. Investigation of External-Cavity Semiconductor-Laser Emitting Near-Diffraction Limited Beam[J]. Chinese Journal of Lasers, 2004, 31(s1): 483
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