• Frontiers of Optoelectronics
  • Vol. 1, Issue 3, 258 (2008)
Guoliang LIU1, Jianghong YAO1,*, Jingjun XU1, and Zhanguo WANG2
Author Affiliations
  • 1The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Tianjin Key Laboratory of Photonics Materials and Technology for Information Science, TEDA Applied Physics School, Nankai University, Tianjin 300457, China
  • 2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.1007/s12200-008-0050-0 Cite this Article
    Guoliang LIU, Jianghong YAO, Jingjun XU, Zhanguo WANG. Temperature dependence of photoluminescence of QD arrays[J]. Frontiers of Optoelectronics, 2008, 1(3): 258 Copy Citation Text show less
    References

    [1] Heinrichsdorff F, Ribbat C, Grundmann M, et al. High-power quantum-dot lasers at 1100 nm. Applied Physics Letters, 2000, 76(5): 556-558

    [2] Krebs R, Klopf F, Rennon S, et al. High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 mm. Electronics Letters, 2001, 37(20): 1223-1225

    [3] Rebohle L, Schrey F F, Hofer S, et al. Energy level engineering in InAs quantum dot nanostructures. Applied Physics Letters, 2002, 81(11): 2079-2081

    [4] Wang J, Xing D. Overview of the research on quantum-dot lasers. Chinese Journal of Quantum Electronics, 2003, 20(2): 129-134 (in Chinese)

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    [6] Kong L M, Cai J F, Chen Z R, et al. Studies on time-resolved photoluminescence spectrum of wetting layer and quantum dots in the structure of self-organized quantum dots. Chinese Journal of Quantum Electronics, 2003, 20(2), 208-212 (in Chinese)

    [7] Brusaferri L, Sanguinetti S, Grilli E, et al. Thermally activated carrier transfer and luminescence line shape in self-organized InAs dots. Applied Phsics Letters, 1996, 69(22): 3354-3356

    [8] de Sales F V, Cruz J M R, da Silva S W, et al. Carrier kinetics in quantum dots through continuous wave photoluminescence modeling: A systematic study on a sample with surface dot density gradient. Journal of Appled Physics, 2003, 94(3): 1787-1794

    [9] Zhang Y C, Huang C J, Liu F Q, et al. Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots. Journal of Crystal Growth, 219(3): 199-204

    [10] Wang J Z, Yang Z, Yang C L. Photoluminescence of InAs quantum dots grown on GaAs surface. Applied Physics Letters, 2000, 77(18): 2837-2839

    [11] Marcinkevicius S, Leon R. Photoexcited carrier transfer in InGaAs quantum dot structures: dependence on the dot density. Applied Physics Letters, 2000, 76(17): 2406-2408

    [12] Dai Z H, Sun J Z, Zhang L D, et al. Study on the coupled multiple nanocrystal quantum-dot system. Physica E, 2003, 18(4): 412-420

    Guoliang LIU, Jianghong YAO, Jingjun XU, Zhanguo WANG. Temperature dependence of photoluminescence of QD arrays[J]. Frontiers of Optoelectronics, 2008, 1(3): 258
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