• Journal of Synthetic Crystals
  • Vol. 49, Issue 11, 2013 (2020)
JIANG Fulong1,*, XU Feifan2, LIU Zhaojun1, LIU Bin2, and ZHENG Youdou2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: Cite this Article
    JIANG Fulong, XU Feifan, LIU Zhaojun, LIU Bin, ZHENG Youdou. Development of GaNBased MicroLED Display Technology[J]. Journal of Synthetic Crystals, 2020, 49(11): 2013 Copy Citation Text show less

    Abstract

    Modern society has realized informationization and is developing towards intelligentization. The technology of display is the key tache to achieve the information intercharge and intelligence. Among the many display technologies, the MicroLED display has emerged as the nextgeneration displays due to the excellent properties, such as high contrast, fast response, wide color gamut, low power consumption and long lifetime which could be used in the application with advanced display needs. However, in the commercialization of MicroLED display technology, there are still some technical bottlenecks that have not been solved. For epitaxial technology, the substrate selection, wavelength uniformity and defect management need to be considered for the application of MicroLED display. For the MicroLED devices, there is still no effective solution to solve the efficiency attenuation. Furthermore, by using the color conversion media, the monolithic fullcolor display technology is not yet mature which need further investigation. Starting from the above three issues, this article reviews the development and the current technical issues of MicroLED displays.
    JIANG Fulong, XU Feifan, LIU Zhaojun, LIU Bin, ZHENG Youdou. Development of GaNBased MicroLED Display Technology[J]. Journal of Synthetic Crystals, 2020, 49(11): 2013
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