Fig. 1. (a) The configuration of a complete microcircuit on a diamond anvil: 1-the Mo electrodes, 2-the Al₂O₃ layer deposited on the Mo film, 3-the Al₂O₃ layer deposited on the diamond anvil, 4-exposed diamond anvil, A and B are the contact ends of the microcircuit; (b) the cross section of the designed diamond-anvil-cell. (a) 金刚石砧面上微电路结构示意图, 1-钼电极, 2-在钼膜上沉积的Al₂O₃绝缘层, 3-沉积到金刚石砧面上的Al₂O₃, 4-裸露的金刚石砧面, A和B为微电路的接触端; (b) 金刚石对顶砧的剖面示意图

Fig. 2. The impedance spectra of TiO₂ measured within 0−12 GPa in DAC: (a) 1.4 GPa; (b) 4.2 GPa; (c) 8.5 GPa; (d) 11.5 GPa. 金红石相TiO₂在0—12 GPa压力范围内阻抗谱变化示意图　(a) 1.4 GPa; (b) 4.2 GPa; (c) 8.5 GPa; (d) 11.5 GPa

Fig. 3. The impedance spectra of TiO₂ measured under high pressure (12.7−39.9 GPa). TiO₂在高压环境下(12.7—39.9 GPa)测量的阻抗谱变化曲线

Fig. 4. The change of resistance of TiO₂ as a function of pressure. TiO₂总电阻随压力的变化关系

Fig. 5. The change of space charge potential ( ) of TiO₂ as a function of pressure. TiO₂晶界空间电荷势( )随压力的变化关系