Synthesis and opto-electrical properties of Cu2NiSnS4 nanoparticles using a facile solid-phase process at low temperature

Shi-na LI; Rui-xin MA; Jian-wen NIU

doi:10.1007/s11801-020-9188-9

Journals >Optoelectronics Letters >Volume 16 >Issue 6 >Page 401 > Article

Optoelectronics Letters
Vol. 16, Issue 6, 401 (2020)

Synthesis and opto-electrical properties of Cu₂NiSnS₄ nanoparticles using a facile solid-phase process at low temperature

Shi-na LI¹, Rui-xin MA^2、*, and Jian-wen NIU²

Author Affiliations

¹Tianjin Research Institute for Water Transport Engineering, Ministry of Transport, Tianjin 300000, China

²School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083,China

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DOI: 10.1007/s11801-020-9188-9 Cite this Article

LI Shi-na, MA Rui-xin, NIU Jian-wen. Synthesis and opto-electrical properties of Cu₂NiSnS₄ nanoparticles using a facile solid-phase process at low temperature[J]. Optoelectronics Letters, 2020, 16(6): 401 Copy Citation Text

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Abstract

Cu₂NiSnS₄ nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180 °C. The crystalline structure, morphology and optical properties of the Cu₂NiSnS₄ nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu₂NiSnS₄ nanoparticles were studied at various temperature. The results showed that the Cu₂NiSnS₄ nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.

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