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    Journals >Chinese Journal of Lasers >Volume 35 >Issue s1 >Page 157 > Article
    • Chinese Journal of Lasers
    • Vol. 35, Issue s1, 157 (2008)
    Study of High-Luminescence Semiconductor Laser′s Film
    Wang Hongming1、*, Fu Xiuhua2, and Zhang Enjie1
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    Wang Hongming, Fu Xiuhua, Zhang Enjie. Study of High-Luminescence Semiconductor Laser′s Film[J]. Chinese Journal of Lasers, 2008, 35(s1): 157 Copy Citation Text show less
    References

    [4] Nicolas Wiedmann, Juergen Jandeleit, Dieter Hottmann et al.. Defects and degradation of InGa(Al)As/GaAs high power diode lasers[C]. SPIE, 2000, 3889: 90～95

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    Wang Hongming, Fu Xiuhua, Zhang Enjie. Study of High-Luminescence Semiconductor Laser′s Film[J]. Chinese Journal of Lasers, 2008, 35(s1): 157
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