• Optoelectronics Letters
  • Vol. 9, Issue 3, 198 (2013)
Shi-na LI, Rui-xin MA*, Chun-hong MA, Dong-ran LI, Yu-qin XIAO, Liang-wei HE, and Hong-min ZHU
Author Affiliations
  • Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, China
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    DOI: 10.1007/s11801-013-2411-1 Cite this Article
    LI Shi-na, MA Rui-xin, MA Chun-hong, LI Dong-ran, XIAO Yu-qin, HE Liang-wei, ZHU Hong-min. Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering[J]. Optoelectronics Letters, 2013, 9(3): 198 Copy Citation Text show less
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    LI Shi-na, MA Rui-xin, MA Chun-hong, LI Dong-ran, XIAO Yu-qin, HE Liang-wei, ZHU Hong-min. Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering[J]. Optoelectronics Letters, 2013, 9(3): 198
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