Microwave plasma chemical vapor deposition (MPCVD) is considered to be one of the ideal methods to synthesize large-scale and high-quality single crystal diamond. However, its low growth rate (~10 μm/h) and high defect density (103-107 cm-2) are the main factors hindering the application of MPCVD single crystal diamond. After decades of unremitting efforts of research teams, many achievements have been made in high-speed growth and high-quality growth of MPCVD single crystal diamond. But in addition to this, problem of the unity of high-speed rate and high-quality growth should be solved in order to realize the high-end application value of MPCVD single crystal diamond.