[1] J. Feinleib, J. deNeufville, S. C. Moss et al.. Rapid reversible light-induced crystallizationin of amorphous semiconductors [J]. Appl. Phys. Lett., 1971- 18(6)：254～257
[2] H. Iwasaki, M. Harigaya, O. Nonoyama et al.. Completely erasable phase change optical disc Ⅱ: application of Ag-In-Sb-Te mixed-phase system for rewritable compact disc compatible with CD-velocity and double CD-velocity [J]. Jpn. J. Appl. Phys., 1993, 32(Part 1, 11B):5241～5247
[3] Guo-Fu Zhou. Materials aspects in phases change optical recording [J]. Materials Science and Engineering A, 2001, 304-306:73～80
[4] K.-G. Lee, C.-M. Park, D.-S. Yoon et al.. Experimental results of space layer thickness for blue-wavelength dual-layered disc [J]. Jpn. J. Appl. Phys., 2001, 40(Part 1, 3B):1643～1644
[5] T. Yanagosawa, T. Nomot, S. Ohsawa et al.. Signal simulation of 25 Gbytes read-only optical disk system using a high numerical aperture objective lens [J]. Jpn. J. Appl. Phys., 2001, 40(Part 1, 3B):1536～1541
[6] I. Ichimura, K. Kishima, K. Osato et al.. Near-field phase-change optical recording of 1.36 numerical aperture [J]. Jpn. J. Appl. Phys., 2000, 39(Part 1, 2B):962～967
[7] V. Weidenhof, I. Friedrich, S. Ziegler et al.. Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5 [J]. J. Appl. Phys., 1999, 86(10):5879～5887
[8] V. Weidenhof, I. Friedrich, S. Ziegler et al.. Laser induced crystallization of amorphous Ge2Sb2Te5 films [J]. J. Appl. Phys., 2001, 89(6):3168～3176
[9] G. Mongia, P. K. Bhatnagar. Study of the crystallization behavior of Ag-In-Sb-Te phase change optical recording film [J]. Opt. Eng., 2003, 42(1):148～150
[10] H. Tashiro, M. Harigaya, Y. Kageyama et al.. Structural analysis of Ag-In-Sb-Te phase-change material [J]. Jpn. J. Appl. Phys., 2002, (Part 1, 6A):3758～3759
[16] C. Peng, M. Mansuripur. Studies of the crystallization process in thin films of GeSbTe [C]. SPIE, 1999, 3864:203～205
