Research on Performance Regulation Technology of HgCdTe Infrared Detector

Wen HE; Cong WANG; Zhen TIAN; Xin WANG; Da GAO; Hai-yan YANG; Wei BAI

doi:10.3969/j.issn.1672-8785.2021.12.002

[4] Rogalskia A, Chrzanowski K. Infrared Devices and Techniques[J]. OptoElectron Review, 2002, 10(2): 111136.

[7] Rogalski A. Infrared Detector[M]. New York: CRC Press, 2011.

[12] Hansen G L, Schmit J L. Calculation of Intrinsic Carrier Concentrations in Hg1-xCdxTe[J]. Journal of Applied Physics, 1983, 54: 16391640.

[13] Tang D H, Xue L, Zhang L Z, et al. Doping Effect of Boron in Hg0.75Cd0.25Te First-principles Study[J]. Acta Physica Sinica, 2012, 61(2): 027102.

[14] Zhang X H, Chen L, Lin T, et al. Photoluminescence and Electrical Characteristics of Arsenicdoped HgCdTe[J]. Journal of infrared and milimeter waves, 2012, 31(5): 04070410.

[15] Zhao H X, Chen X S, Lu J P, et al. Electronic Properties of HgTe within Different Structures[J]. International Journal of Modern Physics B, 2013, 27(18): 1350086.

[16] Zhao H X, Chen X S, Lu J P, et al. Band Gap Tuning in HgTe through Uniaxial Strains[J]. Solid State Communications, 2013, 166: 15.

[17] Reibel Y, Rouvie A, Nedelcu A, et al. Large Format, Small Pixel Pitch and Hot Detectors at SOFRADIR[C]. SPIE, 2013, 8896: 88960B.

[19] Mollard L, Bourgeois G, Lobre C, et al. P-on-n HgCdTe Infrared Focal-plane Arrays: From short-wave to Very-long-wave infrared[J]. Journal of electronic materials, 2014, 43(3): 802807.

[20] Gravrand O, Chorier P. Status of Very Long Infrared-wave Focal Plane Array Development at DEFIR[C]. SPIE, 2009, 7298: 729821.

[25] Stoltz A J, Benson J D, Jaime-Vasquez M, et al. A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds[J]. Journal of Electronic Materials, 2014, 43(9): 37083717.

[31] Pal R, Malik A, Srivastav V, et al. Compositionally Graded Interface for Passivation of HgCdTe Photodiodes[J]. Journal of Electronic Materials, 2006, 35(10): 17931800.