Study for Characteristics of Passively Q-switched Nd: YVO4 Laser with Central Semiconductor SWANG Yaturable Absorption Mirror

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 36 >Issue 3 >Page 401 > Article

Acta Photonica Sinica
Vol. 36, Issue 3, 401 (2007)

Study for Characteristics of Passively Q-switched Nd: YVO4 Laser with Central Semiconductor SWANG Yaturable Absorption Mirror

[in Chinese]^1、2, [in Chinese]³, [in Chinese]³, [in Chinese]³, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study for Characteristics of Passively Q-switched Nd: YVO4 Laser with Central Semiconductor SWANG Yaturable Absorption Mirror[J]. Acta Photonica Sinica, 2007, 36(3): 401 Copy Citation Text

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References

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[2] ZHENG Q,ZHAO L,YE Z Q,et al.LD-pumped singlefrequency passively Q-switched green laser[J].Optics & Laser Technology,2002,34(6):425-427.

[3] SP(U)HLER G J,PASCHOTTA R,FLUCK R,et al.Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers[J].J Opt Soc Am B,1999,16(3):376-388.

[4] KAJARA T T,GAETA A L.Q switching of a diode-pumped Nd:YAG laser with GaAs[J].Opt Lett,1996,21(16):1244-1246.

[5] LIU Q,WU H S,GONG M L,et al.GaAs as a passive Q-switch and brewster plate for pulsed Yb:YAG laser[J].Optics Communications,2003,222:355-361.

[9] PAN H F,XU S X,ZENG H P.Passively Q-switched singlelongitudinal-mode c-cut Nd:GdVO4 laser with a twisted-mode cavity[J].Opyics Express,2005,13 (7):2755-2760.

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