Influence of Mercury-rich Annealing on Electrical Properties of HgCdTe

Xin WANG; Dong-sheng ZHAO

doi:10.3969/j.issn.1672-8785.2021.01.002

Journals >INFRARED >Volume 42 >Issue 1 >Page 6 > Article

INFRARED
Vol. 42, Issue 1, 6 (2021)

Influence of Mercury-rich Annealing on Electrical Properties of HgCdTe

Xin WANG^* and Dong-sheng ZHAO

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[in Chinese]

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DOI: 10.3969/j.issn.1672-8785.2021.01.002 Cite this Article

WANG Xin, ZHAO Dong-sheng. Influence of Mercury-rich Annealing on Electrical Properties of HgCdTe[J]. INFRARED, 2021, 42(1): 6 Copy Citation Text

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References

[1] Rogalski A. History of Infrared Detectors[J]. Op-to-Electronics Review, 2012, 20(3): 279308.

[4] Jones C L, Quelch M J T, Capper P, et al. Effects of Annealing on the Electrical Properties of CdxHg1-xTe[J]. Applied Physics, 1982, 53(12): 90809092.

[5] Schaake H F, Tregilgas J H, Beck J D, et al. The Effect of Low Temperature Annealing on Defects, Impurities, and Electrical Properties of(Hg,Cd)Te[J]. Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films, 1985, 3(1): 143149.

WANG Xin, ZHAO Dong-sheng. Influence of Mercury-rich Annealing on Electrical Properties of HgCdTe[J]. INFRARED, 2021, 42(1): 6

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