• Acta Photonica Sinica
  • Vol. 31, Issue 3, 308 (2002)
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE X-RAY DIFFRACTION STUDY ON THE INTERFACE OF AlGaAs BUFFER LAYER AND GaAs ACTIVE LAYER OF THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(3): 308 Copy Citation Text show less
    References

    [1] Fewster P F.High-resolution diffraction-space mapping and topography.Appl Phys,1994,A58(1):121~127

    [2] Fewster P F,Measurement of interface roughness in a superlattice of delta-barriers of Al in GaAs using high-resolution X-ray diffractometry.J Phys D:Appl Phys,1995,28A(1):154~158

    [3] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8(10):1926~1929

    [4] van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.Appl Phys,1994,A58(1):129~134

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE X-RAY DIFFRACTION STUDY ON THE INTERFACE OF AlGaAs BUFFER LAYER AND GaAs ACTIVE LAYER OF THE TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(3): 308
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