Researching | Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films

Journals >Acta Photonica Sinica >Volume 49 >Issue 8 >Page 0831001 > Article

Acta Photonica Sinica
Vol. 49, Issue 8, 0831001 (2020)

Structure and Luminescence Properties of Eu³⁺ and Dy³⁺ Co-implanted AlN Films

Hai MA¹, Xiao-dan WANG^1、*, Xiang LI¹, Dan WANG¹, Hong-min MAO¹, and Xiong-hui ZENG²

Author Affiliations

¹Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

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DOI: 10.3788/gzxb20204908.0831001 Cite this Article

Hai MA, Xiao-dan WANG, Xiang LI, Dan WANG, Hong-min MAO, Xiong-hui ZENG. Structure and Luminescence Properties of Eu³⁺ and Dy³⁺ Co-implanted AlN Films[J]. Acta Photonica Sinica, 2020, 49(8): 0831001 Copy Citation Text

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References

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[8] S LECLERC, B LACROIX, A DECLéMY. Mechanisms of damage formation in Eu-implanted AlN. Journal of Applied Physics, 112, 073525(2012).

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[18] P MENDES, K LORENZ, E ALVES. Measuring strain caused by ion implantation in GaN. Materials Science in Semiconductor Processing, 98, 95-99(2019).

[19] E WENDLER, W WESCH, A Y AZAROV. Comparison of low-and room-temperature damage formation in Ar ion implanted GaN and ZnO. Nuclear Instruments and Methods in Physics Research Section B:Beam Interactions with Materials and Atoms, 307, 394-398(2013).

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Hai MA, Xiao-dan WANG, Xiang LI, Dan WANG, Hong-min MAO, Xiong-hui ZENG. Structure and Luminescence Properties of Eu³⁺ and Dy³⁺ Co-implanted AlN Films[J]. Acta Photonica Sinica, 2020, 49(8): 0831001

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