Dy³⁺ and Eu³⁺ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X-ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy³⁺ dose. When the Dy³⁺ dose increases from 5×10¹⁴ at/cm² to 1×10¹⁵ at/cm², the compressive stress of samples is close to saturation. For Dy³⁺ and Eu³⁺ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy³⁺ and Eu³⁺ is proposed. In addition, through changing the dose ratio of Dy³⁺ respect to Eu³⁺ ions, the chromaticity coordinates and color temperatures of Dy³⁺ and Eu³⁺ co-doped AlN can be effectively regulated.