MOLECULAR BEAM EPITAXIAL GROWTH OF CdTe(211)B COMPOSITE SUBSTRATES ON SILICON

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 4 >Page 245 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 4, 245 (2005)

MOLECULAR BEAM EPITAXIAL GROWTH OF CdTe(211)B COMPOSITE SUBSTRATES ON SILICON

[in Chinese]^1、2, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. MOLECULAR BEAM EPITAXIAL GROWTH OF CdTe(211)B COMPOSITE SUBSTRATES ON SILICON[J]. Journal of Infrared and Millimeter Waves, 2005, 24(4): 245 Copy Citation Text

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Abstract

The preliminary results on molecular beam epitaxial growth of ZnTe/CdTe(211)B composite substrates on silicon for HgCdTe FPAs applications were described. Si/ZnTe/CdTe(211)B composite substrate on 3-inch Si was obtained by the improvements in low temperature treatment on Si(211), low temperature ZnTe nucleation, high temperature annealing as well as high temperature ZnTe or CdTe growth. (133) twin-free CdTe (211)B layers were obtained. The CdTe thickness was larger than 10 μm. An averaged XRD FWHM of 120 arc sec with a minimum value of 100 arc sec was achieved.

Keywords

CdTe Si substrate MBE

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