A gain-guided GaAlAs/GaAs phase-locked laser array

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 18 >Issue 8 >Page 561 > Article

Chinese Journal of Lasers
Vol. 18, Issue 8, 561 (1991)

A gain-guided GaAlAs/GaAs phase-locked laser array

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A gain-guided GaAlAs/GaAs phase-locked laser array[J]. Chinese Journal of Lasers, 1991, 18(8): 561 Copy Citation Text

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Abstract

A gain-guided GaAlAs/GaAs phase-locked laser array is described, which consists of multi-stripes made by Zn diffusion with oxide mask. A typical threshold current of less than 200mA and an output power of more than 240mW were obt ained, and the phase-locking is shown in the far field patterns.

Keywords

phase-looked array semiconductor laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. A gain-guided GaAlAs/GaAs phase-locked laser array[J]. Chinese Journal of Lasers, 1991, 18(8): 561

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