• Optics and Precision Engineering
  • Vol. 32, Issue 5, 643 (2024)
Zhaolin YUAN1,2,3,*, Yongwei WU1, Luyao YU1, Jianfeng HE1,2,3..., Nengchang XU1, Xueyuan WANG1,2,3 and Pengfei LU1,2,3|Show fewer author(s)
Author Affiliations
  • 1School of Information Engineering, East China University of Technology, Nanchang33003, China
  • 2School of Software, East China University of Technology, Nanchang330013, China
  • 3Jiangxi Engineering Technology Research Center of Nuclear Geoscience Data Science and System, Nanchang001, China
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    DOI: 10.37188/OPE.20243205.0643 Cite this Article
    Zhaolin YUAN, Yongwei WU, Luyao YU, Jianfeng HE, Nengchang XU, Xueyuan WANG, Pengfei LU. Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J]. Optics and Precision Engineering, 2024, 32(5): 643 Copy Citation Text show less
    Schematic diagram of ZnO∶Ga microrods UV photodetector
    Fig. 1. Schematic diagram of ZnO∶Ga microrods UV photodetector
    XRD patterns of ZnO∶Ga microrods with different Ga doping concentrations
    Fig. 2. XRD patterns of ZnO∶Ga microrods with different Ga doping concentrations
    SEM images of ZnO∶Ga microrods with different Ga doping concentrations and EDS pattern of ZnO∶Ga microrods with 1% Ga doping
    Fig. 3. SEM images of ZnO∶Ga microrods with different Ga doping concentrations and EDS pattern of ZnO∶Ga microrods with 1% Ga doping
    TEM images of ZnO∶Ga microrods with 1% Ga doping
    Fig. 4. TEM images of ZnO∶Ga microrods with 1% Ga doping
    I-V characteristics of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations in dark and under UV illumination
    Fig. 5. I-V characteristics of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations in dark and under UV illumination
    I-t characteristics of ZnO∶Ga microrods UV photoetectors with different Ga doping concentrations by turning on and off UV light periodically
    Fig. 6. I-t characteristics of ZnO∶Ga microrods UV photoetectors with different Ga doping concentrations by turning on and off UV light periodically
    One typical response-decay period of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations
    Fig. 7. One typical response-decay period of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations

    Ga掺杂

    浓度/%

    2θ/(°)
    (100)(002)(101)
    031.7434.4036.24
    0.531.7234.4036.22
    131.7634.4236.26
    231.7434.4236.24
    431.7634.4236.24
    Table 1. Position of 2θ angle of main diffraction peaks for ZnO∶Ga microrods with different Ga doping concentrations

    Ga掺杂

    浓度/%

    光电流(5 V)

    /μA

    响应度(5 V)

    /(A·W-1

    增益

    (5 V)

    比探测率

    (5 V)/Jones

    响应时间/s衰减时间/s
    013.560.531.802.94×101152.960.7
    0.57.180.280.957.84×101142.148.4
    1105.5513.1344.633.31×101212.336.4
    215.180.592.012.07×101241.042.9
    431.551.234.195.92×101251.684.4
    Table 2. Performance parameters of ZnO∶Ga microrods UV photodetectors with different Ga doping concentrations
    光敏材料响应度/(A·W-1比探测率/Jones响应时间/s衰减时间/s
    ZnO∶Al films385.631.8×10123036
    ZnO∶Fe films390.1964.95×1010--
    ZnO∶Ga nanosheets320.87-3443
    ZnO∶Ga nanorods28--29.7589.67
    ZnO∶Ga microrods13.133.31×101212.336.4
    Table 3. Comparison of main performance parameters among 1% Ga-dopted ZnO∶Ga microrods UV photodetector and several metal-doped ZnO UV photodetectors reported in recent works
    Zhaolin YUAN, Yongwei WU, Luyao YU, Jianfeng HE, Nengchang XU, Xueyuan WANG, Pengfei LU. Fabrications and characteristics of Ga-doped ZnO microrods ultraviolet photodetectors[J]. Optics and Precision Engineering, 2024, 32(5): 643
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