• Semiconductor Optoelectronics
  • Vol. 43, Issue 3, 539 (2022)
YANG Fengjuan1,2,3,*, ZHONG Haiying1, CHEN Yanbin1, and WANG Yi1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2022042202 Cite this Article
    YANG Fengjuan, ZHONG Haiying, CHEN Yanbin, WANG Yi. Progress on Performance Modification of Bismuthbased Leadfree Piezoelectric Sensitive Materials[J]. Semiconductor Optoelectronics, 2022, 43(3): 539 Copy Citation Text show less

    Abstract

    Highperformance electronic devices with leadfree piezoelectric materials have been widely applied in various fields. Bismuthbased materials have certain comprehensive properties, especially in the field of high temperature piezoelectric, which is a candidate system with potential to replace PZTbased materials. In this paper, an overview of the research advances related to the key problem of how to modified the properties of leadfree piezoelectric materials is provided, focusing on the following aspects, such as the control of material components to modify the multiphase boundary, doping, adjustment of preparation process and domain engineering. In addition, this perspective tries to analyze the problems that still need to be solved in the practical applications of leadfree piezoelectric materials.
    YANG Fengjuan, ZHONG Haiying, CHEN Yanbin, WANG Yi. Progress on Performance Modification of Bismuthbased Leadfree Piezoelectric Sensitive Materials[J]. Semiconductor Optoelectronics, 2022, 43(3): 539
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