[1] Joergensen C,Danielsen S L,Vaa M,et al.40 Gb/s all-optical wavelength conversion by semiconductor optical amplifiers.Electronics Letters,1996,32(4):367～368

[2] Stephen H.Amplifier research seeks to open 'second window'.Lightwave, 1998,(11):36～38

[3] Koonath P,Kim S,Cho Woon-Jo,et al.Polarization-Insensitive quantum-well semiconductor optical amplifiers.IEEE J of Quantum Electronics, 2002,38(9):1282～1290

[4] Ishikawa T,Bowers J E.Band lineup and in-plan effective mass of InGaAsP or In InGaAlAs on InP strained-layer quantum well.IEEE J of Quantum Electronics, 1994,30(2):562～570

[5] Choy W C H.Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications.IEEE J of Quantum Electronics, 2000,36(2):164～174

[6] Susuki Y,Magari K,Ueki M,et al.High gain, and high power 1.3 μm compressive strained MQW optical amplifier.IEEE Photonics Technology Letters, 1993,5(4):404～406

[7] Newkirk M A,Miller B I,Koren U,et al.1.5 μm multi-quantum well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain.IEEE Photonics Technology Letters, 1993,5(4):406～408

[8] Rgaku Corporation, Double crystal method X-ray diffractometer specifications,1980.51～52