• Frontiers of Optoelectronics
  • Vol. 6, Issue 4, 448 (2013)
Weisong YANG1, Yipei WANG1, Yaoguang MA2, Chao MENG1, Xiaoqin WU1, and Qing YANG1、*
Author Affiliations
  • 1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027, China
  • 2State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
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    DOI: 10.1007/s12200-013-0344-8 Cite this Article
    Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires[J]. Frontiers of Optoelectronics, 2013, 6(4): 448 Copy Citation Text show less

    Abstract

    The characteristics of curved semiconductor nanowire (NW) lasers were investigated. The red-shift in the laser spectra with increasing bending angles can be observed much more clearly than that in the photoluminescence (PL) spectra. Due to oscillation of light in resonant cavity, the bending loss of laser exhibits multiple times amplification of that of PL. Furthermore, an abnormal phenomenon of dominant peak switching is found in curved NWs when increasing the pump power, which has been first discovered and reported.
    Weisong YANG, Yipei WANG, Yaoguang MA, Chao MENG, Xiaoqin WU, Qing YANG. Lasing characteristics of curved semiconductor nanowires[J]. Frontiers of Optoelectronics, 2013, 6(4): 448
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