• Acta Photonica Sinica
  • Vol. 51, Issue 2, 0251211 (2022)
Yuxiang LIU1、2、3, Ruikang ZHANG1、2、3, Huan WANG1、2、3, Dan LU1、2、3、*, and Lingjuan ZHAO1、2、3
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
  • 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China
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    DOI: 10.3788/gzxb20225102.0251211 Cite this Article
    Yuxiang LIU, Ruikang ZHANG, Huan WANG, Dan LU, Lingjuan ZHAO. 25-GHz Semiconductor Mode-locked Laser with Subpicosecond Pulse Output in the 1.5-μm Band(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251211 Copy Citation Text show less
    References

    [1] S KOENIG, D LOPEZ-DIAZ, J ANTES et al. Wireless sub-THz communication system with high data rate. Nature Photonics, 7, 977-981(2013).

    [2] A KHILO, S J SPECTOR, M E GREIN et al. Photonic ADC: overcoming the bottleneck of electronic jitter. Optics Express, 20, 4454-4469(2012).

    [3] S LIU, X WU, D JUNG et al. High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity. Optica, 6, 128-134(2019).

    [4] Haiyue PANG, Xiaodong LIN, Zhengmao WU et al. Widely tunable narrow-linewidth photonic microwave generation using optically injected semiconductor laser combined with optoelectronic loops. Acta Photonica Sinica, 47, 0114003(2018).

    [5] G P AGRAWAL. Effect of gain dispersion on ultrashort pulse amplification in semiconductor laser amplifiers. IEEE Journal of Quantum Electronics, 21, 1843-1849(1991).

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    [7] D J DERICKSON, R J HELKEY, A MAR et al. Short pulse generation using multisegment mode-locked semiconductor lasers. IEEE Journal of Quantum Electronics, 28, 2186-2202(1992).

    [8] L HOU, P STOLARZ, J JAVALOYES et al. Subpicosecond pulse generation at quasi-40-GHz using a passively mode-locked AlGaInAs/InP 1.55-μm strained quantum-well laser. IEEE Photonics Technology Letter, 21, 1731-1733(2009).

    [9] J AKBAR, L HOU, M HAJI et al. High peak power (550 mW) 40 GHz mode-locked DBR lasers with integrated optical amplifiers, 755-756(2011).

    [10] P ZHAO, A LIU, W ZHENG. 80 GHz AlGaInAs/InP colliding-pulse mode-locked laser with high pulse power. Applied Physics Express, 9, 122701(2016).

    Yuxiang LIU, Ruikang ZHANG, Huan WANG, Dan LU, Lingjuan ZHAO. 25-GHz Semiconductor Mode-locked Laser with Subpicosecond Pulse Output in the 1.5-μm Band(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251211
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