• Frontiers of Optoelectronics
  • Vol. 4, Issue 2, 137 (2011)
Haixin WU*, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, and Zhenyou WANG
Author Affiliations
  • Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
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    DOI: 10.1007/s12200-011-0155-8 Cite this Article
    Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137 Copy Citation Text show less
    References

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    [2] Hsu Y K, Chen C W, Huang J Y, Pan C L, Zhang J Y, Chang C S. Erbium doped GaSe crystal for mid-IR applications. Optics Express, 2006, 14(12): 5484-5491

    [3] Werle P, Slemr F, Maurer K. Near-and mid infrared laser-optical sensors for gas analysis. Optics and Lasers in Engineering, 2002, 37(2-3): 101-114

    [4] Miyata K, Petrov V, Kato K. Phase-matching properties for AgGaGeS4. Applied Optics, 2007, 46(23): 5728-5731

    [5] Das S, Ghosh C, Gangopadhyay S, Andreev Y M, Badikov V V. AgGaGeS4 crystals for nonlinear laser device applications. Japanese Journal of Applied Physics, 2006, 45(7): 5795-5797

    [6] Petrov V, Badikov V, Shevyrdyaeva G, Panyutin V, Chizhikov V. Phase-matching properties and optical parametric amplification in single crystals of AgGaGeS4. Optical Materials, 2004, 26(3): 217-222

    [7] Yurchenko O M, Olekseyuk I D, Parasyuk O V, Pankevich V Z. Single crystal growth and properties of AgGaGeS4. Journal of Crystal Growth, 2005, 275: e1983-e1985

    [8] Schunemann P G, Zawilski K T, Pollak T M. Horizontal gradient freeze growth of AgGaGeS4 and AgGaGe5Se12. Journal of Crystal Growth, 2006, 287(2): 248-251

    [9] Tochitsky S Y, Petukhov V O, Gorobets V A, Churakov V V, Jakimovich V N. Efficient continuous-wave frequency doubling of a tunable CO2 laser in AgGaSe2. Applied Optics, 1997, 36(9): 1882-1888

    Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137
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