Growth of large size AgGaGeS4 crystal for infrared conversion

Haixin WU; Youbao NI; Chen LIN; Mingsheng MAO; Ganchao CHENG; Zhenyou WANG

doi:10.1007/s12200-011-0155-8

Journals >Frontiers of Optoelectronics >Volume 4 >Issue 2 >Page 137 > Article

Frontiers of Optoelectronics
Vol. 4, Issue 2, 137 (2011)

Growth of large size AgGaGeS4 crystal for infrared conversion

Haixin WU^*, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, and Zhenyou WANG

Author Affiliations

Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China

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DOI: 10.1007/s12200-011-0155-8 Cite this Article

Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137 Copy Citation Text

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Abstract

Single crystals of AgGaGeS4 (AGGS) were grown in a modified Bridgman furnace with 25 mm in diameter and 70mm in length. The transmission spectra of as-grown AGGS slices were measured on a Hitachi 270 - 30 spectrophotometer, the fabricated device crystal was 5 mm×5mm×3.5 mm in dimension and its absorption was 0.04-0.15 cm-1. Frequency doubling of 2.79 and 8 μm laser radiation were investigated using fabricated device crystals with thicknesses of 3.5 and 2.7 mm respectively.

Keywords

AgGaGeS4 (AGGS)Bridgman technique crystal growth frequency doubling

Haixin WU, Youbao NI, Chen LIN, Mingsheng MAO, Ganchao CHENG, Zhenyou WANG. Growth of large size AgGaGeS4 crystal for infrared conversion[J]. Frontiers of Optoelectronics, 2011, 4(2): 137

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