Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED

MA Yingjun; LIN Quan; YU Hongguo; MA Huichao; XU Xing; LI Wanpeng; XU Suocheng

Journals >Journal of Synthetic Crystals >Volume 49 >Issue 8 >Page 1555 > Article

Journal of Synthetic Crystals
Vol. 49, Issue 8, 1555 (2020)

Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED

MA Yingjun, LIN Quan^*, YU Hongguo, MA Huichao..., XU Xing, LI Wanpeng and XU Suocheng|Show fewer author(s)

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[in Chinese]

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DOI: Cite this Article

MA Yingjun, LIN Quan, YU Hongguo, MA Huichao, XU Xing, LI Wanpeng, XU Suocheng. Concentration Distribution of Longitudinal Carriers in Silicon-doped HB-GaAs Single Crystals for Infrared LED[J]. Journal of Synthetic Crystals, 2020, 49(8): 1555 Copy Citation Text

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References

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[4] Abdenacer A, Mhamed B, Reshak A H, et al. Electronic structure and optical properties of dilute boron-bismide quatemary alloys BxGa1-xAs1-yBiy/GaAs for infrared optoelectronic devices［J］.Optik-International Journal for Light and Electron Optics,2017,135: 57-69.

[5] Upadhyay S, Mandal A, Agarwal A, et al. Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions［J］.Materials Research Bulletin,2016,84: 79-84.