Influence factors of the pulsed breakdown time delay jitter of a self-triggered UV-illuminated switch and an improvement method

Tianchi Wang; Haiyang Wang; Tao Huang; Junna Li; Gang Wu; Linshen Xie; Wei Chen; Yingchao Du

doi:10.11884/HPLPB202234.210459

Journals >High Power Laser and Particle Beams >Volume 34 >Issue 7 >Page 075010 > Article

High Power Laser and Particle Beams
Vol. 34, Issue 7, 075010 (2022)

Influence factors of the pulsed breakdown time delay jitter of a self-triggered UV-illuminated switch and an improvement method

Tianchi Wang¹, Haiyang Wang², Tao Huang², Junna Li³, Gang Wu², Linshen Xie², Wei Chen^2、*, and Yingchao Du¹

Author Affiliations

¹Key Laboratory of Particle & Radiation Imaging, Ministry of Education, Tsinghua University, Beijing 100084, China

²State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

³State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an 710049, China

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DOI: 10.11884/HPLPB202234.210459 Cite this Article

Tianchi Wang, Haiyang Wang, Tao Huang, Junna Li, Gang Wu, Linshen Xie, Wei Chen, Yingchao Du. Influence factors of the pulsed breakdown time delay jitter of a self-triggered UV-illuminated switch and an improvement method[J]. High Power Laser and Particle Beams, 2022, 34(7): 075010 Copy Citation Text

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Fig. 1. The structure of the self-triggered pre-ionized switch

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Fig. 2. An equivalent circuit of the experimental platform

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Fig. 3. Experimental waveforms and reading criteria

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Fig. 4. Breakdown time delay and jitter under different working coefficient

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Fig. 5. Influence of electrode material on the breakdown time delay and jitter under the same input pulse waveform

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Fig. 6. Influence of electrode material on the breakdown time delay and jitter under the peak-time breakdown case

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Fig. 7. Influence of electrode material on the breakdown voltage and jitter under the peak-time breakdown case

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Fig. 8. Influence of parallel resistor on the discharge current of trigger gap

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Fig. 9. Breakdown time delay and jitter with a continuously arcing trigger gap under different pulse rise time

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Fig. 10. Breakdown voltage and jitter with a continuously arcing trigger gap under different pulse rise time

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p/MPa	mean breakdown time delay ${\bar t}_{\rm{d}}$/ns	breakdown time delay jitter t_j/ns	mean breakdown voltage ${\bar U}_{\rm{b}}$/kV	percentage of front edge breakdown/%
0.1	83.6	13.2	249.7	52.6
0.2	81.1	7.7	365.5	70.0
0.3	99.9	9.0	485.0	100
0.4	99.3	3.3	513.1
0.5	96.9	2.5	617.1
0.6	96.2	3.2	703.3
0.7	97.5	3.5	794.4

Table 1. Breakdown characteristics of the switch (R=49 kΩ, R_tr removed)

p/MPa	mean breakdown time delay ${\bar t}_{\rm{d}}$/ns	breakdown time delay jitter t_j/ns	mean breakdown voltage ${\bar U}_{\rm{b}}$/kV	percentage of front edge breakdown/%
0.1	72.6	4.9	271.9	100
0.2	88.3	5.8	358.2	100
0.3	95.5	6.8	459.6	88.0
0.4	98.0	3.9	553.1	98.0
0.5	92.3	3.1	663.1	94.0
0.6	95.5	2.1	755.8	100
0.7	99.0	2.4	839.0	100

Table 2. Breakdown characteristics of the switch (R=49 kΩ, R_tr=4.5 kΩ)

p/MPa	mean breakdown time delay ${\bar t}_{\rm{d}}$/ns	breakdown time delay jitter t_j/ns	mean breakdown voltage ${\bar U}_{\rm{b}}$/kV	percentage of front edge breakdown/%
0.1	99.4	2.5	193.2	100
0.2	99.5	2.0	311.3
0.3	99.1	0.9	423.9
0.4	101.2	1.2	519.2
0.5	100.2	1.0	630.8
0.6	100.2	1.6	717.9
0.7	99.1	1.6	804.7

Table 3. Breakdown characteristics of the switch (R=49 kΩ, R_tr=2.2 kΩ)

p/MPa	mean breakdown time delay ${\bar t}_{\rm{d}}$/ns	breakdown time delay jitter t_j/ns	mean breakdown voltage ${\bar U}_{\rm{b}}$/kV	breakdown voltage jitter/%
0.4	101.2	1.2	519.2	0.47
0.5	100.2	1.0	630.8	0.36
0.6	100.2	1.6	717.9	0.42
0.7	99.1	1.6	804.7	0.35

Table 4. Breakdown characteristics of the switch (R=49 kΩ, R_tr=2.2 kΩ, pulse rise time=100 ns)

p/MPa	mean breakdown time delay ${\bar t}_{\rm{d}}$/ns	breakdown time delay jitter t_j/ns	mean breakdown voltage ${\bar U}_{\rm{b}}$/kV	breakdown voltage jitter/%
0.4	169.0	7.1	505.0	0.84
0.5	169.7	5.7	603.9	0.54
0.6	169.2	7.8	708.9	0.52
0.7	169.4	5.3	780.2	0.66

Table 5. Breakdown characteristics of the switch (R=49 kΩ, R_tr=2.2 kΩ, pulse rise time=180 ns)

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