Sideband-Locked High-Power 780 nm Laser Source for Precise Measurement Based on Rb Atoms

Shanshan Wei; Yuanhuang Liu; Qunfeng Chen; Bo Yao; Ji Zhang; Lin Zhou; Qinghe Mao

doi:10.3788/CJL202148.0701008

Journals >Chinese Journal of Lasers >Volume 48 >Issue 7 >Page 0701008 > Article

Chinese Journal of Lasers
Vol. 48, Issue 7, 0701008 (2021)

Sideband-Locked High-Power 780 nm Laser Source for Precise Measurement Based on Rb Atoms

Shanshan Wei^1、2, Yuanhuang Liu^1、2, Qunfeng Chen³, Bo Yao², Ji Zhang^1、2, Lin Zhou³, and Qinghe Mao^1、2、*

Author Affiliations

¹School of Environmental Science and Optoelectronic Technology, University of Science and Technology of China, Hefei, Anhui 230026, China

²Anhui Provincial Key Laboratory of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui 230031, China

³Innovation Academy for Precision Measurement Science and Technology, Chinese Academy of Sciences, Wuhan, Hubei 430071,China

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DOI: 10.3788/CJL202148.0701008 Cite this Article Set citation alerts

Shanshan Wei, Yuanhuang Liu, Qunfeng Chen, Bo Yao, Ji Zhang, Lin Zhou, Qinghe Mao. Sideband-Locked High-Power 780 nm Laser Source for Precise Measurement Based on Rb Atoms[J]. Chinese Journal of Lasers, 2021, 48(7): 0701008 Copy Citation Text

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