• Chinese Journal of Lasers
  • Vol. 35, Issue s1, 9 (2008)
Wang Yunxiang*, Huang Lei, Gong Mali, and Zhang Haitao
Author Affiliations
  • [in Chinese]
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    Wang Yunxiang, Huang Lei, Gong Mali, Zhang Haitao. Low Voltage Driving Coupled-Cavity Electro-Optically Q-Switched Microchip Lasers[J]. Chinese Journal of Lasers, 2008, 35(s1): 9 Copy Citation Text show less

    Abstract

    Coupled-cavity electro-optically Q-switched microchip lasers are integrated solid-state lasers with advantages of small size, fundamental transverse mode, single longitudinal mode, linear polarization, high repetition rate, and short pulse duration. They are ideal seed sources for high repetition rate, high beam quality MOPA systems. Experimental and theoretical study of the lasers is demonstrated. From theoretical analysis, long electric material and high end-face reflectivity lead to narrow Fabry-Pérot etalon transmission bandwidth, and low driving voltage. Two experimental setups are designed for low voltage driving. The gain medium and the electric material are Nd:YVO4 and LiTaO3, respectively. The cavity size is smaller than 3 mm×3 mm×2.5 mm. In the first setup, the output characteristics are studied through changing the length of electric material. Pulse repetition rates as high as 300 kHz is achieved with 184 mW pump power and 240 V driving voltage. The pulse width and peak power are 10 ns and 9.4 W, respectively. In the second setup, 1 MHz pulse rate is achieved in a short time period, by increasing the end-face reflectivity.
    Wang Yunxiang, Huang Lei, Gong Mali, Zhang Haitao. Low Voltage Driving Coupled-Cavity Electro-Optically Q-Switched Microchip Lasers[J]. Chinese Journal of Lasers, 2008, 35(s1): 9
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