1 550 nm long-wavelength vertical-cavity surface emit-ting lasers

Li-jie LIU; Yuan-da WU; Yue WANG; Jun-ming AN; Xiong-wei HU

doi:10.1007/s11801-018-8037-6

Journals >Optoelectronics Letters >Volume 14 >Issue 5 >Page 342 > Article

Optoelectronics Letters
Vol. 14, Issue 5, 342 (2018)

1 550 nm long-wavelength vertical-cavity surface emit-ting lasers

Li-jie LIU^1、2, Yuan-da WU^1、2、*, Yue WANG¹, Jun-ming AN^1、2, and Xiong-wei HU¹

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1007/s11801-018-8037-6 Cite this Article

LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei. 1 550 nm long-wavelength vertical-cavity surface emit-ting lasers[J]. Optoelectronics Letters, 2018, 14(5): 342 Copy Citation Text

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Abstract

A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabri-cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1-x-y)As/InP, and 6 strain compensated AlxGayIn(1-x-y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricat-ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera-tion at room temperature.

LIU Li-jie, WU Yuan-da, WANG Yue, AN Jun-ming, HU Xiong-wei. 1 550 nm long-wavelength vertical-cavity surface emit-ting lasers[J]. Optoelectronics Letters, 2018, 14(5): 342

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