[3] A. Agnesi, S. D. Acqua, E. Piccinini et al.. Efficient wavelength conversion with high-power passively Q-switched diode-pumped neodymium lasers [J]. IEEE J. Quantum Electron., 1998, 34(8):1480～1484
[4] R. Fluck, B. Braun, E. Gini et al.. Passively Q-switched 1.34-μm Nd∶YVO4 microchip laser with semiconductor saturable-absorber mirrors [J]. Opt. Lett., 1997, 22(13):991～993
[5] Z. Xiong, Z. G. Li, N. Moore et al.. Detailed investigation of thermal effects in longitudinally diode-pumped Nd∶YVO4 lasers [J]. IEEE J. Quantum Electron., 2003, 39(8):979～986
[6] Keming Du, Daijun Li, Hengli Zhang et al.. Electro-optically Q-switched Nd∶YVO4 slab laser with a high repetition rate and a short pulse width [J]. Opt. Lett., 2003, 28(2):87～89
[8] A. A. Kaminskii, K. Ueda, H. J. Eichler et al.. Tetragonal vanadates YVO4 and GdVO4—new efficient χ(3)-materials for Raman lasers [J]. Opt. Commun., 2001, 194(1-3):201～206
[9] Y. F. Chen. High-power diode-pumped actively Q-switched Nd∶YVO4 self-Raman laser:influence of dopant concentration [J]. Opt. Lett., 2004, 29(16):1915～1917
[10] Y. F. Chen. Compact efficient all-solid-state eye-safe laser with self-frequency Raman conversion in a Nd∶YVO4 crystal [J]. Opt. Lett., 2004, 29(18):2172～2174
[11] Y. F. Chen. Efficient subnanosecond diode-pumped passively Q-switched Nd∶YVO4 self-stimulated Raman laser [J]. Opt. Lett., 2004, 29(11):1251～1253
[12] A. A. Demidovich, P. A. Apanasevich, L. E. Batay et al.. Sub-nanosecond microchip laser with intracavity Raman conversion [J]. Appl. Phys. B, 2003, 76(5):509～514
[13] Weibiao Chen, Yuji Inagawa, T. Omatsu et al.. Diode-pumped self-stimulating, passively Q-switched Nd3+∶PbWO4 Raman laser [J]. Opt. Commun., 2001, 194(4-6):401～407
[14] H. M. Pask. The design and operation of solid-state Raman lasers [J]. Prog. in Quantum Electron., 2003, 27(1):3～56
[15] Xingyu Zhang, Shengzhi Zhao, Qingpu Wang et al.. Modeling of diode-pumped actively Q-switched lasers [J]. IEEE J. Quantum Electron., 1999, 35(12):1912～1918
