This article, based on the author's experience, briefly reviews the development history of early domestic and international semiconductor lasers, and then mainly focuses on the introduction of research progress in several aspects of III-V compound semiconductor lasers by research institutions and enterprises in Europe, America, Japan, and China in recent 10 years: 1) In terms of high-power semiconductor lasers. GaAs-based 8xx nm and 9xx nm edge emitting lasers, as the pump lasers and core components of solid-state and fiber lasers, are still rely heavily on imports despite that the technology and the index has been improved at home. Research, development and production of high-performance, high-reliability and high-power semiconductor lasers are the key to meeting the strong demand of the high-power laser industry and improving the competitiveness of China's high-end manufacturing. 2) In terms of three-dimensional sensing semiconductor lasers. In the past five years, China has developed nearly a hundred lidar and 3D sensing companies. As the core light source of lidar, the 905nm edge emitting lasers has also made remarkable progress internationally. The performance indicators of the chips produced by local companies are close to and comparable to the similar international products, but they still need to be strengthened and improved quickly in the product and industrialization. 3) In terms of VCSEL devices. Internationally, both in communication and 3D sensing people have made great achievements in technology and a wide range of practical market application. Although gratifying progress has also been made in China, there is still a need to greatly improve the performance, reliability and stability of the independent chip to meet the growing market batch demand and the future development needs. 4) In terms of of infrared semiconductor lasers. American and Japanese research institutions and companies are leading the world in the research of mid and far infrared and terahertz lasers, mainly in GaSb-based edge emitting infrared lasers, InP-based and InAs-based quantum cascade lasers. Important achievements have been made in this field in China, and more attention is paid on the application to meet the demand, but more efforts are needed in industrialization.

In short, Europe, America and Japan have significant advantages in semiconductor laser technology and market. Chinese research institutions and enterprises need to cooperate closely targeting high-power fiber laser pump sources, high-speed optical communication lasers, consumer electronics and other fields, research and develop high-performance edge emitting lasers and vertical cavity surface emitting lasers, improve the reliability and yield of chips, arm China's high-end manufacturing, 5G and future 6G communication equipment and systems with home made laser chips, realize laser chips with independent intellectual property rights, and enhance the core competitiveness of China's optoelectronic industry. It is also firmly believed that more rapid research and development and industrialization will be obtained in the next few years!