Weimin Hu, Xiaojun Wang, Changyong Tian, Jing Yang, Ke Liu, Qinjun Peng. Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe[J]. High Power Laser and Particle Beams, 2022, 34(1): 011009
- High Power Laser and Particle Beams
- Vol. 34, Issue 1, 011009 (2022)
Fig. 1. Band structure of Hg1-x Cdx Te changes with composition and image of response curve of HgCdTe material (red curve)
Fig. 2. Variation of carrier temperature, lattice temperature and number density of carrier with time at the incident plane (100 ps, 200 mJ/cm2 incident pulse)
Fig. 3. Material’s temperature and carrier density in the HgCdTe material change with pulse width (energy density is 200 mJ/cm2)
Fig. 4. Material’s temperature and carrier density in HgCdTe material irradiated by different kinds of laser pulses change with energy density (pulse width is 30 ps ～ 10 ns. Energy density is 100～500 mJ/cm2)
Fig. 5. Hierarchical structure diagram of HgCdTe detector and transmittance curve of optical filter
Fig. 6. Schematic diagram of experimental device
Fig. 7. Contour plot of detector pixels’ response measured by attenuation method and image of light spot displayed by the detector (The light intensity attenuates to 2.85×10-7 of the original intensity)
Fig. 8. Damage images of the detector pixel induced by 300 ps (energy density is 193 mJ/cm2) and 10 ns (energy density is 474 mJ/cm2) single pulsed laser
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