808 nm Wavelength High Power Semiconductor Laser Arrays

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 28 >Issue 6 >Page 494 > Article

Chinese Journal of Lasers
Vol. 28, Issue 6, 494 (2001)

808 nm Wavelength High Power Semiconductor Laser Arrays

[in Chinese]^1、2, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 808 nm Wavelength High Power Semiconductor Laser Arrays[J]. Chinese Journal of Lasers, 2001, 28(6): 494 Copy Citation Text

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Abstract

High power semiconductorlaser stack arrays, grown by MBE have been prepared. The epitaxial structure for LD is anoptimized SQW GRIN SCH structure, and cm bars are made with a fill factor of 60%. A LDstack assembly with water cooling is formed to obtain an effective heat delivery ability.The following results are preliminarily obtained: Ith of the stack lasers is 12A, CW output power can reach to 40 W at 30 A; FWHM of the lasing spectrum is 6 nm with acentral wavelength of 810 nm, and the slope efficiency (ηs) is 2.2 W/A.

Keywords

high power semiconductor laser stack array

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 808 nm Wavelength High Power Semiconductor Laser Arrays[J]. Chinese Journal of Lasers, 2001, 28(6): 494

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