• Chinese Journal of Lasers
  • Vol. 40, Issue 6, 602010 (2013)
Chen Meng*, Chang Liang, Yang Chao, Chen Liyuan, and Li Gang
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/cjl201340.0602010 Cite this Article Set citation alerts
    Chen Meng, Chang Liang, Yang Chao, Chen Liyuan, Li Gang. 100 kHz Nd:YVO4 Picosecond Regenerative Amplifier End-Pumped by 914 nm Laser Diode[J]. Chinese Journal of Lasers, 2013, 40(6): 602010 Copy Citation Text show less

    Abstract

    914 nm wavelength in-band pumping of Nd:YVO4 reduces crystal thermal load and end-surface thermal stress, then the performance of Nd:YVO4 regenerative amplifier is enhanced at high repetition rate. The influence of high-voltage-duration applied to Pockel-cell on Nd:YVO4 regenerative amplifier with output pulse stability of 100 kHz is investigated in detail. When 68 W pumping power at 914 nm center wavelength is absorbed by the Nd:YVO4 crystal and appropriated high-voltage-duration is applied to Pockel-cell, the Nd:YVO4 regenerative amplifier that produces stable 21.2 W average power at 100 kHz repetition rate is seeded by a low power of 1 nJ and 5.7 ps duration semiconductor saturable absorber mirror (SESAM) mode-locked Nd:YVO4 laser with repetition rate of 42.7 MHz.
    Chen Meng, Chang Liang, Yang Chao, Chen Liyuan, Li Gang. 100 kHz Nd:YVO4 Picosecond Regenerative Amplifier End-Pumped by 914 nm Laser Diode[J]. Chinese Journal of Lasers, 2013, 40(6): 602010
    Download Citation