• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 9, 877 (2022)
JU Anan1、2、*, GUO Hongxia3, DING Lili3, LIU Jiancheng4, ZHANG Fengqi3, ZHANG Hong1, LIU Yitian1, GU Chaoqiao1, LIU Ye1, and FENG Yahui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    DOI: 10.11805/tkyda2021440 Cite this Article
    JU Anan, GUO Hongxia, DING Lili, LIU Jiancheng, ZHANG Fengqi, ZHANG Hong, LIU Yitian, GU Chaoqiao, LIU Ye, FENG Yahui. Study on Single Event Upset of floating gate device[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 877 Copy Citation Text show less
    References

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    [3] CELLERE G,PACCAGNELLA A,VISCONTI A,et al. Subpicosecond conduction through thin SiO2 layers triggered by heavy ions[J]. Journal of Applied Physics, 2006,99(7):074101-1-7.

    [4] BUTT N ZALAM M. Modeling single event upsets in floating gate memory cells[C]// 2008 IEEE International Reliability Physics Symposium. Phoenix,AZ,USA:IEEE, 2008:547-555.

    [5] BI J S, XI K, LI B, et al. Heavy ion induced upset errors in 90 nm 64 Mb NOR-type floating-gate flash memory[J]. Chinese Physics B, 2018,27(9):619-623.

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    [9] JU Anan,GUO Hongxia,DING Lili,et al. Analysis of ion-induced SEFI and SEL phenomena in 90 nm NOR flash memory[J]. IEEE Transactions on Nuclear Science, 2021,68(10):2508-2515.Jian,et al. Process of floating gate Flash memory single event effects study[J]. Environmental Adaptability & Reliability, 2019, 37(6):56-60.)

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    [15] SNYDER E S, MCWHORTER P J, DELLIN T A, et al. Radiation response of floating gate EEPROM memory cells[J]. IEEE

    JU Anan, GUO Hongxia, DING Lili, LIU Jiancheng, ZHANG Fengqi, ZHANG Hong, LIU Yitian, GU Chaoqiao, LIU Ye, FENG Yahui. Study on Single Event Upset of floating gate device[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 877
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