Study of 940 nm Semiconductor Lasers with Non-Absorb Window Structure Fabricated by Impurity-Free Vacancy Disordering

Zhou Lu; Bo Baoxue; Wang Yunhua; Jia Baoshan; Bai Duanyuan; Qiao Zhongliang; Gao Xin

doi:10.3788/cjl201239.0802001

Journals >Chinese Journal of Lasers >Volume 39 >Issue 8 >Page 802001 > Article

Chinese Journal of Lasers
Vol. 39, Issue 8, 802001 (2012)

Study of 940 nm Semiconductor Lasers with Non-Absorb Window Structure Fabricated by Impurity-Free Vacancy Disordering

Zhou Lu^*, Bo Baoxue, Wang Yunhua, Jia Baoshan, Bai Duanyuan, Qiao Zhongliang, and Gao Xin

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[in Chinese]

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DOI: 10.3788/cjl201239.0802001 Cite this Article Set citation alerts

Zhou Lu, Bo Baoxue, Wang Yunhua, Jia Baoshan, Bai Duanyuan, Qiao Zhongliang, Gao Xin. Study of 940 nm Semiconductor Lasers with Non-Absorb Window Structure Fabricated by Impurity-Free Vacancy Disordering[J]. Chinese Journal of Lasers, 2012, 39(8): 802001 Copy Citation Text

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