Effect of the thickness of light absorption layer on the light-induced transverse thermoelectric effect in Bi2Sr2Co2Oy films

Guoying Yan; Liqing Sun; Shufang Wang; Guangsheng Fu

doi:10.3788/COL201513.063101

Journals >Chinese Optics Letters >Volume 13 >Issue 6 >Page 063101 > Article

Chinese Optics Letters
Vol. 13, Issue 6, 063101 (2015)

Effect of the thickness of light absorption layer on the light-induced transverse thermoelectric effect in Bi₂Sr₂Co₂O_y films

Guoying Yan^1、2, Liqing Sun², Shufang Wang^2、*, and Guangsheng Fu^1、2、**

Author Affiliations

¹School of Information Engineering, Hebei University of Technology, Tianjin 300401, China

²Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

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DOI: 10.3788/COL201513.063101 Cite this Article Set citation alerts

Guoying Yan, Liqing Sun, Shufang Wang, Guangsheng Fu. Effect of the thickness of light absorption layer on the light-induced transverse thermoelectric effect in Bi₂Sr₂Co₂O_y films[J]. Chinese Optics Letters, 2015, 13(6): 063101 Copy Citation Text

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Abstract

Light-induced transverse thermoelectric effect is investigated in incline-oriented

{Bi}_{2} {Sr}_{2} {Co}_{2} O_{y}

thin films covered with a graphite light absorption layer. Upon the illumination of a 980 nm cw laser, an enhanced voltage signal is detected and the improvement degree is found to be dependent on the thickness of the graphite layer. A two-dimensional (2D) heat transport model using the finite-difference method provides a reasonable explanation to the experimental data. Present results give some valuable instructions for the design of light absorption layers in this type of detector.