Fig. 1. Structure parameters of GaInP/GaAs/Ge triple-junction solar cells.

Fig. 2. Normalized maximum power versus fluence at the proton irradiation energy of 1 and 3 MeV (symbols and lines are experimental and simulation results respectively).

Fig. 3. Simulation results of I-V curves of GaInP/GaAs/Ge triple-junction solar cells irradiated by protons with different energy and fluence: (a) 0.7 MeV; (b) 1 MeV; (c) 3 MeV; (d) 5 MeV; (e) 10 MeV.

Fig. 4. Simulation results of normalized short-circuit current versus proton fluence for the GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.

Fig. 5. Simulation results of normalized open-circuit voltage versus proton fluence for GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.

Fig. 6. Simulation results of external quantum efficiency of GaInP and GaAs sub-cells before and after different energy proton irradiation with the fluence of 3 × 10¹² cm^–2.

Fig. 7. (a) Simulation results of current density (J_e) of minority carriers (electron) of GaAs middle cell base region before irradiation; (b) simulation results of current density of minority carriers (electron) versus base thickness for GaAs middle cell base region before and after different energy proton irradiation with the fluence of 3 × 10¹² cm^–2.

Fig. 8. Simulation results of normalized maximum power versus proton fluence for GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.

Fig. 9. Degradation of normalized maximum power versus displacement damage dose for GaInP/GaAs/Ge triple-junction solar cells.

Table 1. [in Chinese]

Table 2. [in Chinese]