Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers

Qiuyan Li; Sheng Cao; Peng Yu; Meijing Ning; Ke Xing; Zhentao Du; Bingsuo Zou; Jialong Zhao

doi:10.1364/PRJ.467604

Journals >Photonics Research >Volume 10 >Issue 9 >Page 2133 > Article

Photonics Research
Vol. 10, Issue 9, 2133 (2022)

Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers

Qiuyan Li¹, Sheng Cao^1、2、*, Peng Yu¹, Meijing Ning¹, Ke Xing¹, Zhentao Du¹, Bingsuo Zou¹, and Jialong Zhao^1、3、*

Author Affiliations

¹School of Physical Science and Technology, MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi Universityhttps://ror.org/02c9qn167, Nanning 530004, China

²e-mail: caosheng@gxu.edu.cn

³e-mail: zhaojl@ciomp.ac.cn

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DOI: 10.1364/PRJ.467604 Cite this Article Set citation alerts

Qiuyan Li, Sheng Cao, Peng Yu, Meijing Ning, Ke Xing, Zhentao Du, Bingsuo Zou, Jialong Zhao. Boosting electroluminescence performance of all solution processed InP based quantum dot light emitting diodes using bilayered inorganic hole injection layers[J]. Photonics Research, 2022, 10(9): 2133 Copy Citation Text

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