Si-photocell with ultra-shallow junction by GILD and its characteristics

Zhou Zhengzhuo; Li Ding; Qiu Mingxin; Zhou Yuliang

Journals >Chinese Journal of Lasers >Volume 14 >Issue 9 >Page 544 > Article

Chinese Journal of Lasers
Vol. 14, Issue 9, 544 (1987)

Si-photocell with ultra-shallow junction by GILD and its characteristics

Zhou Zhengzhuo¹, Li Ding¹, Qiu Mingxin¹, and Zhou Yuliang²

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article Set citation alerts

Zhou Zhengzhuo, Li Ding, Qiu Mingxin, Zhou Yuliang. Si-photocell with ultra-shallow junction by GILD and its characteristics[J]. Chinese Journal of Lasers, 1987, 14(9): 544 Copy Citation Text

show less

Abstract

By means of GILD(gas immersion laser doping)on the surfaces of n-Si samples with BBra vapor as material, Si-photo-cells doped with boron have been manufactured with the maximum doping concentration of 1.2x 1021 B+/cm3 near the surface, the junction depth of 0.08/am at 1017 B+/cms and the conversion efficiency of about 9.5% without antireflection coatings.

Zhou Zhengzhuo, Li Ding, Qiu Mingxin, Zhou Yuliang. Si-photocell with ultra-shallow junction by GILD and its characteristics[J]. Chinese Journal of Lasers, 1987, 14(9): 544

Download Citation

Set citation alerts for the article

Tools

Set citation alerts for the article

Save the article for my favorites

Paper Information