[1] Ye Zhizhen, Lü Jianguo, Zhang Yinzhu, et al.. ZnO: Doping and Application[M]. Hangzhou: Zhejiang University Press, 2009.
[2] Z K Tang, G K L Wong, P Yu, et al.. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J]. Appl Phys Lett, 1998, 72(25): 3270-3272.
[3] N D Sachindra, J M Kyeong, P K Jyoti, et al.. ZnO single nanowire-based UV detectors[J]. Appl Phys Lett, 2010, 97(2): 022103.
[4] B Andreas, W Tina, H Jonas, et al.. ZnOAl cathode for highly efficient, semitransparent 4% organic solar cells utilizing TiOx and aluminum interlayers[J]. Appl Phys Lett, 2012, 100(7): 073307.
[5] H P Sung, H L Byoung, M S Jong, et al.. Highly transparent polymer light-emitting diode using modified aluminum-doped zinc oxide top electrode[J]. Appl Phys Lett, 2012, 100(12): 133306.
[6] H K Liang, S F Yu, H Y Yang. ZnO random laser diode arrays for stable single-mode operation at high power[J]. Appl Phys Lett, 2010, 97(24): 241107.
[7] Y Zhao, Y J Jiang, Y Fang. The influence of substrate temperature on ZnO thin films prepared by PLD technique[J]. J Crystal Growth, 2007, 307(2): 278-282.
[8] C H Kwak, B H Kim, C I Park, et al.. Structural and electrical properties of ZnO nanorods and Ti buffer layers[J]. Appl Phys Lett, 2010, 96(5): 051908.
[9] E Cagin, J Yang, W Wang, et al.. Growth and structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy [J]. Appl Phys Lett, 2008, 92(23): 233505.
[10] S Budhi, A K Zaheer, K Imran, et al.. Highly conducting zinc oxide thin films achieved without postgrowth annealing[J]. Appl Phys Lett, 2010, 97(24): 241903.
[11] C H Chia, Y J Lai, T C Han, et al.. High-excitation effect on photoluminescence of sol-gel ZnO nanopowder[J]. Appl Phys Lett, 2010, 96(8): 081903.
[13] M A J Klik, T Gregorkiewicz, I N Yassievich, et al.. Terahertz modulation of the blue photoluminescence in ZnSe[J]. Phys Rev B, 2005, 72(12): 125205.
[14] F Tuomisto, K Saarinen, D C Look, et al.. Introduction and recovery of point defects in electron-irradiated ZnO[J]. Phys Rev B, 2005, 72(8): 085206.
[15] L F Ji, Y J Jiang, W Wang, et al.. Enhancement of the dielectric permittivity of Ta2O5 ceramics by CO2 laser irradiation[J]. Appl Phys Lett, 2004, 85(9): 1577-1579.
[17] Zhao Yan, Jiang Yijian, Yu Yongming et al.. Effect of laser irradiation on dielectric properties of PZT-4 ceramic[J]. Chinese J Lasers, 2012, 39(6): 0606003.
[18] Y Zhao, Y J Jiang. Effect of KrF excimer laser irradiation on the properties of ZnO thin films[J]. J Appl Phy, 2008, 103(11): 114903.
[19] Liu Ying, Jiang Yijian. Super-hydrophobic surface of poly (vinylidene fluoride) film fast fabricated by KrF excimer laser irradiation[J]. Chinese J Lasers, 2011, 38(1): 0106002.
[21] D C Look, D C Reynolds, C W Litton. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy[J]. Appl Phys Lett, 2002, 81(10): 1830-1832.
[22] J F Rommeluére, L Svob, F Jomard. Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy[J]. Appl Phys Lett, 2003, 83(2): 287-289.
[23] J W Sun, Y M Lu, Y C Liu, et al.. Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy[J]. J Appl Phys, 2007, 102(4): 043522.
[24] A Ohtomo, M Kawasaki, T Koida, et al.. MgxZn1-xO as a II-VI widegap semiconductor alloy[J]. Appl Phys Lett, 1998, 72(19): 2466-2468.
[25] M Schirra, R Schneider, A Reiser, et al.. Stacking fault related 3.31 eV luminescence at 130 meV acceptors in zinc oxide[J]. Phys Rev B, 2008, 77(12): 125215.
