New experimental results of depositing metal mm by faser- induced surface chemical reaction is reported. By CW CO2 laser illumination, the rtaction between Ni2O3 on silicon surface and silicon substrate was induced, Nickel film was deposited on silicon surface, and a quasi MOS structural film of Ni-SiO2-Si was formed by one step teratment. AES, X-ray diffraction, BBS, square resistance meter etc. were taken to analyze the composition and the characteristics of the film and the mechanism of its growth was discussed.