[1] P. K. Kuo, G. W. Auner, Z. L. Wu. Microstructure and thermal conductivity of epitaxial AlN thin films［J］. Thin Solid Films, 1994, 253(1-2): 223～227
[2] D. Liufu, K. C. Kao. Piezoelectric dielectric and interfacial properties of aluminum nitride films[J]. J. Vac. Sci. Technol. A, 1998, 16(4): 2360～2366
[3] X. S. Miao, Y. C. Chan, E. Y. B. Pun. A new protective AlN film for organic photoconductor[J]. Appl. Phys. Lett., 1997, 71(2): 184～186
[4] S. Venkataraj, D. Severin, R. Drese et al.. Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering[J]. Thin Solid Films, 2006, 502(1-2): 235～239
[5] I. C. Oliveira, K. G. Grigorov, H. S. Macie et al.. High textured AlN thin films grown by RF magnetron sputtering: composition, structure, morphology and hardness[J]. Vacuum, 2004, 75(4): 331～338
[6] H. E. Cheng, T. C. Lin, W. C. Chen. Preparation of ［002］ oriented AlN thin films by mid-frequency reactive sputtering technique[J]. Thin Solid Films, 2003, 425(1-2): 85～89
[7] C. Ristoscu, C. Ducu, G. Socol et al.. Structural and optical characterization of AlN films grown by pulsed laser deposition[J]. Appl. Surf. Sci., 2005, 248(1-4): 411～415
[8] A. P. Huang, G. J. Wang, S. L. Xu et al.. Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD[J]. Mater. Sci. Engng. B, 2004, 107(2): 161～165
[9] M. Akiyama, C. N. Xu, K. Nonaka et al.. Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films[J]. Thin Solid Films, 1998, 315(1-2): 62～65
[10] F. Medjani, R. Sanjinésa, G. Allidia et al.. Effect of substrate temperature and bias voltage on the crystallite orientation in RF magnetron sputtered AlN thin films[J]. Thin Solid Films, 2006, 515(1): 260～265
[11] Toshihiro Kamohara, Morito Akiyama, Naohiro Ueno et al.. Influence of sputtering pressure on polarity distribution of aluminum nitride thin films[J]. Appl. Phys. Lett., 2006, 89(24): 243507
[12] Hwanchul Lee, Guenhong Kim, Soonku Hong et al.. Influence of sputtering pressure on the microstructure evolution of AlN thin films prepared by reactive sputtering[J]. Thin Solid Films, 1995, 261(1-2): 148～153
[13] G. F. Iriarte, J. G. Rodriquez, F. Calle. Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films[J]. Microsystem Technologies, 2011, 17(3): 381～386
[14] G. F. Iriarte. Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering[J]. J. Vac. Sci. Technol. A, 2010, 28: 193～198
[15] W. H. Zachariasen. Theory of X-Ray Diffraction in Crystals［M］. Beijing: Oversea Publishing House. 2004. 175～176
[16] Zheng Weitao. Thin Film Materials and Technology［M］. Beijing: Chemical Engineering Press, 2007. 86～87
[17] M. Born, E. Wolf. Principles of Optics［M］. Yang Jiasun Transl. Beijing:Electronic Engineering Press,2005. 54～59
[18] R. Swanepoel. Determination of the thickness and optical constants of amorphous silicon[J]. J. Phys. E: Sci. Instrum., 1983, 16(12): 1214～1234
