[1] Polman A. Erbium implanted thin film photonic materials.J Appl Phys, 1997,82(1):1～38

[2] Benatsou M, Capoen B, Bouazaoui M, et al. Preparation and characterization of sol-gel derived Er3+∶Al2O3-SiO2 planar waveguides.Appl Phys Lett, 1997,66: 428～430

[3] van den Hoven G N, Snoeks E, Polman A, et al. Upconversion in Er-implanted Al2O3 waveguides. J Appl Phys, 1996,79(3): 1258～1266

[4] van den Hoven G N, Koper R J I M, Polman A, et al. Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon.Appl Phys Lett, 1996,68(14): 1886～1888

[5] Serna R, de Castro M J, Chaos J A, et al. The role of Er3+-Er3+ separation on the luminescence of Er-doped Al2O3 films prepared by pulsed laser deposition.Appl Phys Lett, 1999,75(26): 4073～4075

[6] Chryssou C E, Pitt C W. Er3+-doped Al2O3 thin films by plasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55 nm optical bandwidth.IEEE J Quantum Electron, 1998,34(2): 282～285

[7] Gaponenko N V, Mudryi A V, Sergeev O V, et al. Erbium luminescence in sol-gel derived oxide glass films.Spectrochimica Acta, 1998,54A(13): 2177～2182

[9] Strohhofer C, Polman A. Absorption and emission spectroscopy in Er3+-Yb3+ doped aluminium oxide waveguides.Opt Mater, 2003, 21(4): 705～712

[10] Chryssou C E, Pitt C W, Chandler P J, et al. Photoluminescence characterisation of Er3+/Yb3+ co-implanted alumina (Al2O3) thin films and sapphire crystals.Proc Inst Elect Eng-Optoelectron, 1998,145(6): 325～330

[13] Manenkov A B, Rozhnev A G.Optical dielectric waveguide analysis, based on the modified finite and integral equation methods.Opt Quantum Electron, 1998, 30(1): 61～70