[1] Chow T P. SiC and GaN highvoltage power switching devices［J］. Materials Science Forum, 2000, 338: 1155.

[2] Waldrop J R, Grant R W, Wang Y C, et al. Metal schottky barrier contacts to alpha 6HSiC［J］. Journal of Applied Physics, 1992, 72:4757.

[4] Cooper J A, Agarwal A. SiC powerswitching devicesthe second electronics revolution?［J］.Proceedings of the IEEE, 2002. 90: 956968.

[5] Kimoto T, Miyamoto N, Matsunami H. Performance limiting surface defects in SiC epitaxial pn junction diodes［J］. IEEE Transactions on Electron Devices, 1999, 46: 471477.

[6] Yamada K, Ishiyama O, Tamura K, et al. Reliability of gate oxides on 4HSiC epitaxial surface planarized by CMP Treatment［J］. Materials Science Forum, 2014,778780: 545548.

[7] Liu K X, Stahlbush R E, Twigg M E,et al. Photoluminescence and electroluminescence imaging of carrot defect in 4HSiC epitaxy［J］. Journal of Electronic Materials, 2007, 36(4): 297306.

[8] Skromme B J, Mikhov M K, Chen L, et al. Characterization of double stacking faults induced by thermal processing of heavily Ndoped 4HSiC substrates［J］. Material Science Forum, 2004, 457460: 581584.

[9] Shrivastava A. Epitaxial growth and characterization of 4Hsilicon carbide on low offaxis substrates for highpower device［EB/OL］. 2008.

[10] Matsunami H, Kimoto T. Stepcontrolled epitaxial growth of SiC: high quality homoepitaxy［J］. Materials Science and Engineering: R:Reports, 1997, 20(3): 125166.

[11] Powell JA, Petit J B, Edgar J H, et al. Application of oxidation to the structural characterization of SiC epitaxial films［J］. Applied Physics Letter, 1991, 59: 333.

[12] Hu J C, Jia R X, Niu Y X, et al. Study of a new type nominal “washboardlike” triangular defects in 4HSiC 4° offaxis (0001) Siface homoepitaxial layers［J］. Journal of Crystal Growth, 2019, 506: 1418.

[13] Harima H. Raman scattering characterization on SiC［J］. Microelectronic Engineering, 2006, 83: 126129.

[14] Xin B, Jia R X, Hu J C, et al. A stepbystep experiment of 3CSiC heteroepitaxial growth on 4HSiC by CVD［J］. Applied Surface Science, 2015, 357780: 985993.

[15] Camarda M, Magna A La, Via F L, et al. Monte carlo study of the early growth stages of 3CSiC on misoriented and 6HSiC substrates［J］. Materials Science Forum, 2014, 778780: 238242.