• Chinese Journal of Lasers
  • Vol. 33, Issue 12, 1593 (2006)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1、2, [in Chinese]1、2, and [in Chinese]1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode Pumped Actively Q-Switched Nd:GdVO4Self-Stimulated Raman Laser[J]. Chinese Journal of Lasers, 2006, 33(12): 1593 Copy Citation Text show less

    Abstract

    Generation of compact and efficient self-stimulated Raman pulses by a laser diode (LD) pumped actively Q-switched c-cut Nd:GdVO4 laser is demonstrated. At 1.8 W incident pump power, the self-stimulated Raman laser produces stable 19 ns pulses at a Stokes wavelength of 1176 nm with 10 μJ pulse energy at 10 kHz repetition rate. The threshold of the self-stimulated Raman laser is 510 mW, the conversion efficiency from the diode pump to the Stokes is 5.6%. Experimental results reveal that efficient self-stimulated Raman conversion frequency can be achieved with a c-cut Nd:GdVO4 crystal and actively Q-switched.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser Diode Pumped Actively Q-Switched Nd:GdVO4Self-Stimulated Raman Laser[J]. Chinese Journal of Lasers, 2006, 33(12): 1593
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