[1] SONG H J,NAGATSUMA T. Present and future of terahertz communications[J]. IEEE Transactions on Terahertz Science & Technology, 2011,1(1):256–263.
[2] TONOUCHI M. Cutting-edge terahertz technology[J]. Nature Photonics, 2007,1(2):97–105.
[3] CHATTOPADHYAY G. Technology,capabilities,and performance of low power terahertz sources[J]. IEEE Transactions on Terahertz Science & Technology, 2011,1(1):33-53.
[4] CROWE T W,BISHOP W L,PORTERFIELD D W. Opening the terahertz window with integrated diode circuits[J]. IEEE Journal of Solid-State Circuits, 2005,40(10):2104-2110.
[5] TREWRJ. High-frequency solid-state electronic devices[J]. IEEE Transactions on Electron Devices, 2005,52(5):638– 649.
[6] SILES J V,GRAJAL J. Physics-based design and optimization of Schottky diode frequency multipliers for terahertz applications[J]. IEEE Transactions on Microwave Theory & Techniques, 2010,58(7):1933-1942.
[9] WILLIAMS B S. Terahertz quantum-cascade lasers[J]. Nature Photonics, 2007,1(9):517-525.
[10] PAGE C H. Harmonic generation with ideal rectifiers[J]. Proceedings of the IRE, 1958,46(10):1738–1740.
[11] CROWE T W,BISHOP W L,PORTERFIELD D W. Opening the terahertz window with integrated diode circuits[J]. IEEE Journal of Solid-State Circuits, 2005,40(10):2104-2110.
[12] K.HLER R,TREDICUCCI A,BELTRAM F,et al. Terahertz semiconductor-heterostructure laser[J]. Nature, 2002,417(6885):156–159.
[13] MATMON G,PAUL D J,LEVER L. Si/SiGe quantum cascade superlattice designs for terahertz emission[J]. Journal of Applied Physics, 2010,107(5):053109–053115.
[14] VOINIGESCU S P,TOMKINS A,DACQUAY E. A study of SiGe HBT signal sources in the 220–330-GHz range[J]. IEEE Journal of Solid-State Circuits, 2013,48(9):2011-2021.