• Acta Physica Sinica
  • Vol. 69, Issue 16, 168101-1 (2020)
Qi Qi, Hai-Feng Chen*, Zi-fan Hong, Ying-Ying Liu, Li-Xin Guo, Li-Jun Li, Qin Lu, and Yi-Fan Jia
Author Affiliations
  • Key Laboratory of Advanced Semiconductor Devices and Materials, School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
  • show less
    DOI: 10.7498/aps.69.20200481 Cite this Article
    Qi Qi, Hai-Feng Chen, Zi-fan Hong, Ying-Ying Liu, Li-Xin Guo, Li-Jun Li, Qin Lu, Yi-Fan Jia. Preparation and characteristics of ultra-wide Ga2O3 nanoribbons up to millimeter-long level without catalyst [J]. Acta Physica Sinica, 2020, 69(16): 168101-1 Copy Citation Text show less
    SEM images of samples a-d at different growth temperatures: (a) Sample A (800 ℃); (b) sample B (850 ℃); (c) sample C (900 ℃); (d) sample D (950 ℃).
    Fig. 1. SEM images of samples a-d at different growth temperatures: (a) Sample A (800 ℃); (b) sample B (850 ℃); (c) sample C (900 ℃); (d) sample D (950 ℃).
    (a) The ultra-long gallium oxide nanoribbons of sample C under low magnification; (b) single gallium oxide nanoribbon at high magnification of sample C; (c) intertwined curved nanoribbons; (d) under high power, the agglomeration of the surface of the sample D nanoribbons deteriorates.
    Fig. 2. (a) The ultra-long gallium oxide nanoribbons of sample C under low magnification; (b) single gallium oxide nanoribbon at high magnification of sample C; (c) intertwined curved nanoribbons; (d) under high power, the agglomeration of the surface of the sample D nanoribbons deteriorates.
    (a) X-ray diffraction pattern of the sample C; (b) raman of the sample C.
    Fig. 3. (a) X-ray diffraction pattern of the sample C; (b) raman of the sample C.
    (a) TEM image of the sample C. Inset shows the SAED pattern; (b) HR-TEM image of the sample C.
    Fig. 4. (a) TEM image of the sample C. Inset shows the SAED pattern; (b) HR-TEM image of the sample C.
    Room temperature PL spectra of β-Ga2O3 nanowires.
    Fig. 5. Room temperature PL spectra of β-Ga2O3 nanowires.
    SamplesGa2O3/g CNTs/gGrowth temperature/℃Times/minN2 carrier gas /sccm
    A11.5800902
    B11.5850902
    C11.5900902
    D11.5950902
    Table 1.

    The growth parameters of samples A–D at different temperature.

    样品A—D在不同温度下的生长参数

    Qi Qi, Hai-Feng Chen, Zi-fan Hong, Ying-Ying Liu, Li-Xin Guo, Li-Jun Li, Qin Lu, Yi-Fan Jia. Preparation and characteristics of ultra-wide Ga2O3 nanoribbons up to millimeter-long level without catalyst [J]. Acta Physica Sinica, 2020, 69(16): 168101-1
    Download Citation